A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON. I: THEORYMANDURAH MM; SARASWAT KC; KAMINS TI et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 10; PP. 1163-1171; BIBL. 21 REF.Article

STRUCTURE AND STABILITY OF LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS.KAMINS TI; MANDURAH MM; SARASWAT KC et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 6; PP. 927-932; BIBL. 16 REF.Article

ARSENIC SEGREGATION IN POLYCRYSTALLINE SILICONMANDURAH MM; SARASWAT KC; KAMINS TI et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 683-685; BIBL. 9 REF.Article

PHOSPHORUS DOPING OF LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMSMANDURAH MM; SARASWAT KC; KAMINS TI et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 1019-1023; BIBL. 10 REF.Article

A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON. II: COMPARISON OF THEORY AND EXPERIMENTMANDURAH MM; SARASWAT KC; KAMINS TI et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 10; PP. 1171-1176; BIBL. 20 REF.Article

DOPANT SEGREGATION IN POLYCRYSTALLINE SILICONMANDURAH MM; SARASWAT KC; HELMS CR et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5755-5763; BIBL. 29 REF.Article